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AOTF3N100

MOSFET N-CH 1000V 2.8A TO220F
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AOTF3N100, produced by Alpha & Omega Semiconductor Inc., is a N-Channel MOSFET transistor in TO-220-3F Through Hole package. The features include 1000V drain-source breakdown voltage, 2.8A (Tc) continuous drain current at 25°C ,4.5V @ 250μA gate-source threshold voltage. AOTF3N100 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1017272-AOTF3N100
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 830pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3F
Dimension TO-220-3 Full Pack
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1017272-AOTF3N100
AOTF3N100 Price

AOTF3N100 Datasheet
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AOTF3N100 In Stock

AOTF3N100 Distributor
AOTF3N100 Transistors - FETs, MOSFETs - RF

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