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BSS308PEH6327XTSA1

Part No : BSS308PEH6327XTSA1
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 30V 2A SOT23
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
405+
€0.119
€48.362
955+
€0.101
€96.565
1,475+
€0.098
€144.883
2,025+
€0.095
€193.057
2,635+
€0.092
€241.063
3,490+
€0.083
€289.035
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 225,850 pieces can ship immediately
MOQ: 405 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024518-BSS308PEH6327XTSA1
Popularity Medium
Fake Threat In the Open Market 33 pct.
Supply and Demand Status Sufficient
BSS308PEH6327XTSA1, produced by Infineon Technologies, is a P-Channel MOSFET transistor in PG-SOT23-3 SMD (SMT) package. The features include 30V drain-source breakdown voltage, 2A (Ta) continuous drain current at 25°C ,2V @ 11μA gate-source threshold voltage. BSS308PEH6327XTSA1 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 5nC @ 10V
Max Input Capacitance 500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024518-BSS308PEH6327XTSA1
Popularity Medium
Fake Threat In the Open Market 33 pct.
Supply and Demand Status Sufficient
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BSS308PEH6327XTSA1 Transistors - FETs, MOSFETs - RF

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