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BSS670S2LH6327XTSA1

Part No : BSS670S2LH6327XTSA1
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 55V 540MA SOT23
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 220,592 pieces
Shipped from : HK warehouse
Expected Shipping Date :
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2.7μA
Max Gate Charge 2.26nC @ 10V
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 650 mOhm @ 270mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024526-BSS670S2LH6327XTSA1
Popularity Medium
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Sufficient
BSS670S2LH6327XTSA1, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-SOT23-3 SMD (SMT) package. The features include 55V drain-source breakdown voltage, 540mA (Ta) continuous drain current at 25°C ,2V @ 2.7μA gate-source threshold voltage. BSS670S2LH6327XTSA1 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2.7μA
Max Gate Charge 2.26nC @ 10V
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 650 mOhm @ 270mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024526-BSS670S2LH6327XTSA1
Popularity Medium
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Sufficient
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BSS670S2LH6327XTSA1 Transistors - FETs, MOSFETs - RF

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