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FQP5N90

MOSFET N-CH 900V 5.4A TO-220
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Rated 5/5 based on 1 customer reviews
Availability: 229 In Stock
FQP5N90, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220-3 Through Hole package. The features include 900V drain-source breakdown voltage, 5.4A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. FQP5N90 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1039864-FQP5N90
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1550pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 2.3 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1039864-FQP5N90
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FQP5N90 Transistors - FETs, MOSFETs - RF

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