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IRFZ44EPBF

MOSFET N-CH 60V 48A TO-220AB
Manufacturer: Infineon Technologies
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Availability: 1 In Stock
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IRFZ44EPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 60V drain-source breakdown voltage, 48A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRFZ44EPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Win Source Part Number 1047242-IRFZ44EPBF
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-220-3
Case / Package TO-220AB
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 23 mOhm @ 29A, 10V
Power Dissipation (Max) 110W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 1360pF @ 25V
Max Gate Charge 60nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 48A (Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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Products specifications
Win Source Part Number 1047242-IRFZ44EPBF
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-220-3
Case / Package TO-220AB
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 23 mOhm @ 29A, 10V
Power Dissipation (Max) 110W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 1360pF @ 25V
Max Gate Charge 60nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 48A (Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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IRFZ44EPBF Transistors - FETs, MOSFETs - RF

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