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RYC002N05T316

0.9V DRIVE NCH SILICON MOSFET
Manufacturer: Rohm Semiconductor
rohs
Availability: 1,260 In Stock
RYC002N05T316, produced by Rohm Semiconductor, is a N-Channel MOSFET transistor in SST3 SMD (SMT) package. The features include 50V drain-source breakdown voltage, 200mA (Ta) continuous drain current at 25°C ,800mV @ 1mA gate-source threshold voltage. RYC002N05T316 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 800mV @ 1mA
Max Input Capacitance 26pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SST3
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1093149-RYC002N05T316
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 800mV @ 1mA
Max Input Capacitance 26pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Tc)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SST3
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1093149-RYC002N05T316
RYC002N05T316 Price

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RYC002N05T316 Transistors - FETs, MOSFETs - RF