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AOTF18N65L

Part No : AOTF18N65L
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 650V 18A TO220F
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 687 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 68nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3785pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 50W (Tc)
Rds On (Maximum) @ Id, Vgs 390 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3F
Package TO-220-3 Full Pack
Win Source Part Number 766431-AOTF18N65L
Popularity Medium
Fake Threat In the Open Market 77 pct.
Supply and Demand Status Limited
Family Name AOTF18N65
ECCN EAR99
Country of Origin China
Estimated EOL Date 2025
Alternative Parts
(Cross-Reference)
TK11A65W,S5X;  TK11A65W,S5X(M;  FCPF380N65FL1;  
Alpha & Omega Semiconductor Inc. AOTF18N65L is available at WIN SOURCE. Please review product page below for detailed information, including AOTF18N65L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for AOTF18N65L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Alpha & Omega Semiconductor Inc.
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 68nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3785pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 50W (Tc)
Rds On (Maximum) @ Id, Vgs 390 mOhm @ 9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220-3F
Package TO-220-3 Full Pack
Win Source Part Number 766431-AOTF18N65L
Popularity Medium
Fake Threat In the Open Market 77 pct.
Supply and Demand Status Limited
Family Name AOTF18N65
ECCN EAR99
Country of Origin China
Estimated EOL Date 2025
Alternative Parts
(Cross-Reference)
TK11A65W,S5X;  TK11A65W,S5X(M;  FCPF380N65FL1;  
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AOTF18N65L Transistors - FETs, MOSFETs - RF

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