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DMN2250UFB-7B

Part No :
DMN2250UFB-7B
Manufacturer :
Catalog :
FETs - Single
Description :
Low On-Resistance | MOSFET N-CH 20V 1.35A 3DFN
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 15,200 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Balance
Popularity Medium
Win Source Part Number 730587-DMN2250UFB-7B
MSL Level 1 (Unlimited)
Manufacturer Pack Quantity 1
Manufacturer Package 3-UFDFN
Supplier Device Package 3-DFN1006 (1.0x0.6)
Mounting Style SMD
Temperature Range - Operating -55°C ~ 150°C
Gate Charge (Qg) (Maximum) at Vgs 3.1nC at 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Rds On (Maximum) at Id, Vgs 170mOhm at 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Id - Continuous Drain Current 1.35A
Vds - Drain-Source Breakdown Voltage 20V
Technology MOSFET
Transistor Polarity N-Channel
Packaging Reel
Manufacturer Diodes Incorporated
Categories Discrete Semiconductor Products
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 94pF at 16V
Power Dissipation (Maximum) 500mW
Diodes Incorporated DMN2250UFB-7B is available at WIN SOURCE. Please review product page below for detailed information, including DMN2250UFB-7B price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DMN2250UFB-7B to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Balance
Popularity Medium
Win Source Part Number 730587-DMN2250UFB-7B
MSL Level 1 (Unlimited)
Manufacturer Pack Quantity 1
Manufacturer Package 3-UFDFN
Supplier Device Package 3-DFN1006 (1.0x0.6)
Mounting Style SMD
Temperature Range - Operating -55°C ~ 150°C
Gate Charge (Qg) (Maximum) at Vgs 3.1nC at 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Rds On (Maximum) at Id, Vgs 170mOhm at 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Id - Continuous Drain Current 1.35A
Vds - Drain-Source Breakdown Voltage 20V
Technology MOSFET
Transistor Polarity N-Channel
Packaging Reel
Manufacturer Diodes Incorporated
Categories Discrete Semiconductor Products
Gate Source Voltage (Maximum) ±8V
Input Capacitance (Ciss) (Maximum) at Vds 94pF at 16V
Power Dissipation (Maximum) 500mW
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