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ZXMC4559DN8TC

MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Manufacturer: Diodes Incorporated
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Availability: 2,400 In Stock
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ZXMC4559DN8TC, produced by Diodes Incorporated, is a transistor in 8-SO SMD (SMT) package. The features include 60V drain-source breakdown voltage, 3.6A, 2.6A continuous drain current at 25°C ,1V @ 250μA (Min) gate-source threshold voltage. ZXMC4559DN8TC is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.6A, 2.6A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20.4nC @ 10V
Max Input Capacitance 1063pF @ 30V
Maximum Power Dissipation 2.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1120371-ZXMC4559DN8TC
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.6A, 2.6A
Maximum Rds On at Id,Vgs 55 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 20.4nC @ 10V
Max Input Capacitance 1063pF @ 30V
Maximum Power Dissipation 2.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1120371-ZXMC4559DN8TC
ZXMC4559DN8TC Price

ZXMC4559DN8TC Datasheet
ZXMC4559DN8TC Application

ZXMC4559DN8TC Replacement
ZXMC4559DN8TC Pdf

ZXMC4559DN8TC Pinout
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ZXMC4559DN8TC Picture
ZXMC4559DN8TC In Stock

ZXMC4559DN8TC Distributor
ZXMC4559DN8TC Transistors - FETs, MOSFETs - RF

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