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ZXMNS3BM832TA

Part No : ZXMNS3BM832TA
Manufacturer : Diodes Incorporated
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 30V 2A 8-MLP
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 2.9nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 314pF @ 15V
Vgs (Maximum) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Maximum) 1W (Ta)
Rds On (Maximum) @ Id, Vgs 180 mOhm @ 1.5A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-MLP, MicroFET (3x2)
Package 8-VDFN Exposed Pad
Win Source Part Number 800447-ZXMNS3BM832TA
Storage Condition Dry storage cabinet & Humidity protection package
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Popularity Medium
Fake Threat 29 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Diodes Incorporated ZXMNS3BM832TA is available at WIN SOURCE. Please review product page below for detailed information, including ZXMNS3BM832TA price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for ZXMNS3BM832TA to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Vgs(th) (Maximum) @ Id 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 2.9nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 314pF @ 15V
Vgs (Maximum) ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Maximum) 1W (Ta)
Rds On (Maximum) @ Id, Vgs 180 mOhm @ 1.5A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-MLP, MicroFET (3x2)
Package 8-VDFN Exposed Pad
Win Source Part Number 800447-ZXMNS3BM832TA
Storage Condition Dry storage cabinet & Humidity protection package
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Popularity Medium
Fake Threat 29 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
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ZXMNS3BM832TA Transistors - FETs, MOSFETs - RF

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