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MBRB2060CTT4G

Part No MBRB2060CTT4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 60V D2PAK
Datasheet
Sample
ECAD Module ECAD
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Pricing & Ordering $2.193 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
18+
$2.8260
$50.868
44+
$2.3190
$102.036
67+
$2.2470
$150.549
92+
$2.1740
$200.008
119+
$2.1020
$250.138
160+
$1.8840
$301.440
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 3,331 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60V
Current - Average Rectified (Io) (per Diode) 10A
Voltage - Forward (Vf) (Max) @ If 950mV @ 20A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 150μA @ 60V
Operating Temperature - Junction -65°C to 175°C
Mounting SMD (SMT)
Case / Package D2PAK-3
Win Source Part Number 132064-MBRB2060CTT4G
Popularity Medium
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Limited

Description

MBRB2060CTT4G - ON Semiconductor

The MBRB2060CTT4G is a robust and efficient Schottky barrier rectifier designed by ON Semiconductor, a leading provider of semiconductor-based solutions. This component is tailored for high-performance applications that require low voltage drop and high surge current capabilities.

Key Features

  • High Surge Capacity: The device can handle a surge current of up to 150A, making it suitable for applications that experience high inrush currents.
  • Low Forward Voltage Drop: With a forward voltage drop as low as 0.60V, this rectifier ensures high efficiency, which is critical in power conservation in electronic circuits.
  • Dual Diode Configuration: The MBRB2060CTT4G features a common cathode dual diode configuration, which simplifies the design of bridge rectification circuits.
  • Power Dissipation: It has a power dissipation of 3.75W, which helps in maintaining optimal performance by effectively managing the heat generated during operation.
  • High Junction Temperature: The device can operate at junction temperatures ranging from -55°C to +150°C, ensuring reliability across a wide range of environmental conditions.

Applications

The MBRB2060CTT4G is suitable for a variety of applications, including:

  • Power supply management
  • Automotive applications
  • DC-DC converters
  • Free-wheeling diodes
  • Power factor correction (PFC) circuits

Product Specifications

Parameter Value
Package TO-263 (D2PAK)
Max Repetitive Reverse Voltage (Vrrm) 60V
Average Rectified Forward Current (Io) 20A
Peak Surge Forward Current (Ifsm) 150A
Forward Voltage Drop (Vf) 0.60V
Operating Junction Temperature (Tj) -55°C to +150°C

With its robust construction and advanced features, the MBRB2060CTT4G from ON Semiconductor is a reliable choice for engineers and designers looking for a high-performance Schottky barrier rectifier for their demanding applications.

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