Search
Filters

FDMC89521L

MOSFET 2N-CH 60V 8.2A POWER33
rohs
Rated 5/5 based on 1 customer reviews
FDMC89521L, produced by Fairchild/ON Semiconductor, is a transistor in 8-Power33 (3x3) SMD (SMT) package. The features include 60V drain-source breakdown voltage, 8.2A continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. FDMC89521L is used in the -55°C to 150°C (TJ) operating temperature range.
Quantity
Price
Ext. Price
45+
€0.962
€43.267
125+
€0.784
€98.040
380+
€0.684
€259.806
Availability: 7,500 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 45 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.2A
Maximum Rds On at Id,Vgs 17 mOhm @ 8.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1635pF @ 30V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-Power33 (3x3)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1038214-FDMC89521L
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8.2A
Maximum Rds On at Id,Vgs 17 mOhm @ 8.2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1635pF @ 30V
Maximum Power Dissipation 800mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-Power33 (3x3)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1038214-FDMC89521L
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 39 pct.
Supply and Demand Status Balance
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
FDMC89521L Price

FDMC89521L Datasheet
FDMC89521L Application

FDMC89521L Replacement
FDMC89521L Pdf

FDMC89521L Pinout
FDMC89521L Image

FDMC89521L Picture
FDMC89521L In Stock

FDMC89521L Distributor
FDMC89521L Transistors - FETs, MOSFETs - RF

Image
Mfr.Part No
Description
Stock
Rail-to-rail input/output 20MHz GBP operational amplifiers
48013
N-Channel 60-V (D-S) MOSFET
6000
Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 2.0A
1132
IC OPAMP GP 2.2MHZ 8DIP
11764
MOSFET N-CH 30V 5X6DFN
65
MULTIPLEXER QUAD 2IN 16TSSOP
599
IC GATE NAND QUAD 2-INPUT 14SOIC
65
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
1