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FQI27N25TU

Part No :
FQI27N25TU
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
250V N-Channel MOSFET
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1,000 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2450pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 180W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 12.75A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1175381-FQI27N25TU
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Limited
Family Name FQI27N25
Introduction Date May 01, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FQI27N25; 
Fairchild/ON Semiconductor FQI27N25TU is available at WIN SOURCE. Please review product page below for detailed information, including FQI27N25TU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI27N25TU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 25.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 65nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2450pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 3.13W (Ta), 180W (Tc)
Rds On (Maximum) @ Id, Vgs 110 mOhm @ 12.75A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I2PAK
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1175381-FQI27N25TU
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Fake Threat In the Open Market 72 pct.
Supply and Demand Status Limited
Family Name FQI27N25
Introduction Date May 01, 2000
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FQI27N25; 
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FQI27N25TU Transistors - FETs, MOSFETs - RF

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