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FQPF4N20L

Part No :
FQPF4N20L
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
200V LOGIC N-Channel MOSFET
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1,000 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 310pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 27W (Tc)
Rds On (Maximum) @ Id, Vgs 1.35 Ohm @ 1.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175480-FQPF4N20L
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Limited
Family Name FQPF4N20L
Introduction Date December 22, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
RCX081N20;   SiHF610; IRF610;  
Fairchild/ON Semiconductor FQPF4N20L is available at WIN SOURCE. Please review product page below for detailed information, including FQPF4N20L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF4N20L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series QFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 5.2nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 310pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 27W (Tc)
Rds On (Maximum) @ Id, Vgs 1.35 Ohm @ 1.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220F
Package TO-220-3 Full Pack
Win Source Part Number 1175480-FQPF4N20L
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Fake Threat In the Open Market 49 pct.
Supply and Demand Status Limited
Family Name FQPF4N20L
Introduction Date December 22, 2000
ECCN EAR99
Country of Origin China, Republic of Korea
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
RCX081N20;   SiHF610; IRF610;  
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