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FQU10N20TU

MOSFET N-CH 200V 7.6A IPAK
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Availability: 10,080 In Stock
FQU10N20TU, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in I-Pak Through Hole package. The features include 200V drain-source breakdown voltage, 7.6A (Tc) continuous drain current at 25°C ,5V @ 250μA gate-source threshold voltage. FQU10N20TU is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1039978-FQU10N20TU
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 51W (Tc)
Maximum Rds On at Id,Vgs 360 mOhm @ 3.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1039978-FQU10N20TU
FQU10N20TU Price

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FQU10N20TU Transistors - FETs, MOSFETs - RF

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