Search
Filters

FDG6301N

MOSFET 2N-CH 25V 0.22A SC70-6
rohs
Rated 5/5 based on 1 customer reviews

FDG6301N, produced by Fairchild/ON Semiconductor, is a transistor in SC-70-6 SMD (SMT) package. The features include 25V drain-source breakdown voltage, 220mA continuous drain current at 25°C ,1.5V @ 250μA gate-source threshold voltage. FDG6301N is used in the -55°C to 150°C (TJ) operating temperature range.

Quantity
Price
Ext. Price
20+
€2.160
€43.189
55+
€1.705
€93.749
170+
€1.534
€260.821
Availability: 3,000 In Stock
This product has a minimum quantity of 20
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 015983-FDG6301N
Family Name FDG6301N
Introduction Date August 06, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FDG6301N_F085;  DMG6301UDW-7;   DMG6301UDW-13; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 015983-FDG6301N
Family Name FDG6301N
Introduction Date August 06, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
FDG6301N_F085;  DMG6301UDW-7;   DMG6301UDW-13; 
FDG6301N Price

FDG6301N Datasheet
FDG6301N Application

FDG6301N Replacement
FDG6301N Pdf

FDG6301N Pinout
FDG6301N Image

FDG6301N Picture
FDG6301N In Stock

FDG6301N Distributor
FDG6301N Transistors - FETs, MOSFETs - RF

Image
Mfr.Part No
Description
Stock
DIODE ZENER 20V 300MW SOD323
11105
IC REG BCK 1.2V 0.33A SYNC 8MLPD
15000
STEREO DAC FOR PORTABLE AUDIO APPLICATIONS
24
Large Output Current Type Low Power-Loss Voltage Regulator
498
IC REG LDO 5V 0.15A SOT23-5
1922
TRIMMER 10K OHM 0.5W PC PIN
2900
IC CLK BUFFER 2:9 200MHZ 32TQFP
300