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FDG6301N

Part No : FDG6301N
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET 2N-CH 25V 0.22A SC70-6
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
20+
€2.223
€44.462
50+
€1.881
€94.041
75+
€1.824
€136.805
100+
€1.767
€176.730
130+
€1.711
€222.370
170+
€1.539
€261.698
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,000 pieces can ship immediately
MOQ: 20 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 015983-FDG6301N
Family Name FDG6301N
Introduction Date August 06, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Alternative Parts
(Cross-Reference)
FDG6301N_F085;  DMG6301UDW-7;   DMG6301UDW-13; 

FDG6301N, produced by Fairchild/ON Semiconductor, is a transistor in SC-70-6 SMD (SMT) package. The features include 25V drain-source breakdown voltage, 220mA continuous drain current at 25°C ,1.5V @ 250μA gate-source threshold voltage. FDG6301N is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Win Source Part Number 015983-FDG6301N
Family Name FDG6301N
Introduction Date August 06, 1999
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Alternative Parts
(Cross-Reference)
FDG6301N_F085;  DMG6301UDW-7;   DMG6301UDW-13; 
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