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FDG6301N

MOSFET 2N-CH 25V 0.22A SC70-6
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Quantity
Price
Ext. Price
20+
$2.511
$50.220
55+
$1.982
$109.010
170+
$1.784
$303.280
Availability: 3,000 In Stock
This product has a minimum quantity of 20

FDG6301N, produced by Fairchild/ON Semiconductor, is a transistor in SC-70-6 SMD (SMT) package. The features include 25V drain-source breakdown voltage, 220mA continuous drain current at 25°C ,1.5V @ 250μA gate-source threshold voltage. FDG6301N is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 015983-FDG6301N
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 220mA
Maximum Rds On at Id,Vgs 4 Ohm @ 220mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.4nC @ 4.5V
Max Input Capacitance 9.5pF @ 10V
Maximum Power Dissipation 300mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 015983-FDG6301N
FDG6301N Price

FDG6301N Datasheet
FDG6301N Application

FDG6301N Replacement
FDG6301N Pdf

FDG6301N Pinout
FDG6301N Image

FDG6301N Picture
FDG6301N In Stock

FDG6301N Distributor
FDG6301N Transistors - FETs, MOSFETs - RF

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