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IRF7343TRPBF

Part No : IRF7343TRPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N/P-CH 55V 8-SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
130+
€0.372
€48.323
310+
€0.315
€97.619
475+
€0.305
€145.004
655+
€0.296
€193.645
845+
€0.286
€241.679
1,125+
€0.257
€289.261
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 77,269 pieces can ship immediately
MOQ: 130 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 4.7A, 3.4A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017513-IRF7343TRPBF
Family Name IRF7343
Introduction Date February 24, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
STS4C3F60L;  AO4612;  IRF7343TR;  
IRF7343TRPBF, produced by Infineon Technologies, is a transistor in 8-SO SMD (SMT) package. The features include 55V drain-source breakdown voltage, 4.7A, 3.4A continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. IRF7343TRPBF is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 4.7A, 3.4A
Maximum Rds On at Id,Vgs 50 mOhm @ 4.7A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 740pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017513-IRF7343TRPBF
Family Name IRF7343
Introduction Date February 24, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Sufficient
Alternative Parts
(Cross-Reference)
STS4C3F60L;  AO4612;  IRF7343TR;  
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IRF7343TRPBF Transistors - FETs, MOSFETs - RF

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