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SI4542DY-T1-GE3

Part No : SI4542DY-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N/P-CH 30V 8-SOIC
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 964 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 50nC @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 129563-SI4542DY-T1-GE3
Popularity Medium
Fake Threat In the Open Market 52 pct.
Supply and Demand Status Limited
Application Field Used in Power Management
SI4542DY-T1-GE3, produced by Vishay, is a transistor in 8-SO SMD (SMT) package. The features include 30V drain-source breakdown voltage, 1V @ 250μA (Min) gate-source threshold voltage. SI4542DY-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 50nC @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 129563-SI4542DY-T1-GE3
Popularity Medium
Fake Threat In the Open Market 52 pct.
Supply and Demand Status Limited
Application Field Used in Power Management
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SI4542DY-T1-GE3 Transistors - FETs, MOSFETs - RF

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