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2N7002BKT,115

Part No :
2N7002BKT,115
Manufacturer :
NXP
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 60V 290MA SOT416
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
1,615+
€0.030
€48.213
3,850+
€0.025
€96.396
6,000+
€0.024
€144.450
8,000+
€0.024
€192.600
10,420+
€0.023
€240.827
13,640+
€0.021
€288.977
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 213,000 pieces can ship immediately
MOQ: 1615 pcs
Order Increment : 3000 pcs
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Products specifications
Supply and Demand Status Sufficient
Fake Threat In the Open Market 45 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 096705-2N7002BKT,115
Dimension SC-75, SOT-416
Case / Package SC-75
Mounting SMD (SMT)
Temperature Range - Operating 150°C (TJ)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Power Dissipation (Max) 260mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 50pF @ 10V
Max Gate Charge 0.6nC @ 4.5V
Gate-Source Threshold Voltage 2.1V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Continuous Drain Current at 25°C 290mA (Ta)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer NXP
Categories Discrete Semiconductor Products

2N7002BKT,115, produced by NXP, is a N-Channel MOSFET transistor in SC-75 SMD (SMT) package. The features include 60V drain-source breakdown voltage, 290mA (Ta) continuous drain current at 25°C ,2.1V @ 250μA gate-source threshold voltage. 2N7002BKT,115 is used in the 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Supply and Demand Status Sufficient
Fake Threat In the Open Market 45 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 096705-2N7002BKT,115
Dimension SC-75, SOT-416
Case / Package SC-75
Mounting SMD (SMT)
Temperature Range - Operating 150°C (TJ)
Maximum Rds On at Id,Vgs 1.6 Ohm @ 500mA, 10V
Power Dissipation (Max) 260mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 50pF @ 10V
Max Gate Charge 0.6nC @ 4.5V
Gate-Source Threshold Voltage 2.1V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Continuous Drain Current at 25°C 290mA (Ta)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer NXP
Categories Discrete Semiconductor Products
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2N7002BKT,115 Price

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2N7002BKT,115 Distributor
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