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2N7002LT1G

MOSFET N-CH 60V 0.115A SOT-23
Availability: 1756001 in stock
Manufacturer: ON Semiconductor
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2N7002LT1G, produced by ON Semiconductor, is a N-Channel MOSFET transistor in SOT-23-3 (TO-236) SMD (SMT) package. The features include 60V drain-source breakdown voltage, 115mA (Tc) continuous drain current at 25°C ,2.5V @ 250μA gate-source threshold voltage. 2N7002LT1G is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 005727-2N7002LT1G
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Input Capacitance 50pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 225mW (Ta)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 005727-2N7002LT1G
2N7002LT1G Price

2N7002LT1G Datasheet
2N7002LT1G Application

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2N7002LT1G Distributor
2N7002LT1G Transistors - FETs, MOSFETs - RF

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