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BSC010NE2LSI

Part No : BSC010NE2LSI
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 25V 38A TDSON-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
55+
€0.947
€52.065
125+
€0.800
€100.032
190+
€0.776
€147.474
260+
€0.752
€195.547
335+
€0.728
€243.889
445+
€0.655
€291.404
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,000 pieces can ship immediately
MOQ: 55 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Limited
Fake Threat In the Open Market 71 pct.
Popularity Medium
Win Source Part Number 104029-BSC010NE2LSI
Dimension 8-PowerTDFN
Case / Package PG-TDSON-8
Mounting SMD (SMT)
Maximum Rds On at Id,Vgs 1.05 mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 4200pF @ 12V
Max Gate Charge 59nC @ 10V
Gate-Source Threshold Voltage 2V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Continuous Drain Current at 25°C 38A (Ta), 100A (Tc)
Drain-Source Breakdown Voltage 25V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
BSC010NE2LSI, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TDSON-8 SMD (SMT) package. The features include 25V drain-source breakdown voltage, 38A (Ta), 100A (Tc) continuous drain current at 25°C ,2V @ 250μA gate-source threshold voltage.
Products specifications
ECAD Module
Supply and Demand Status Limited
Fake Threat In the Open Market 71 pct.
Popularity Medium
Win Source Part Number 104029-BSC010NE2LSI
Dimension 8-PowerTDFN
Case / Package PG-TDSON-8
Mounting SMD (SMT)
Maximum Rds On at Id,Vgs 1.05 mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 4200pF @ 12V
Max Gate Charge 59nC @ 10V
Gate-Source Threshold Voltage 2V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Continuous Drain Current at 25°C 38A (Ta), 100A (Tc)
Drain-Source Breakdown Voltage 25V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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