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BSS131E6327

MOSFET N-CH 240V .11A SOT-23
Manufacturer: Infineon Technologies
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Availability: 1 In Stock
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BSS131E6327, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-SOT23-3 SMD (SMT) package. The features include 240V drain-source breakdown voltage, 110mA (Ta) continuous drain current at 25°C ,1.8V @ 56μA gate-source threshold voltage. BSS131E6327 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Win Source Part Number 099351-BSS131E6327
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-236-3, SC-59, SOT-23-3
Case / Package PG-SOT23-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 14 Ohm @ 100mA, 10V
Power Dissipation (Max) 360mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 77pF @ 25V
Max Gate Charge 3.1nC @ 10V
Gate-Source Threshold Voltage 1.8V @ 56μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Continuous Drain Current at 25°C 110mA (Ta)
Drain-Source Breakdown Voltage 240V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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Products specifications
Win Source Part Number 099351-BSS131E6327
Storage Condition Dry storage cabinet & Humidity protection package
Dimension TO-236-3, SC-59, SOT-23-3
Case / Package PG-SOT23-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 14 Ohm @ 100mA, 10V
Power Dissipation (Max) 360mW (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 77pF @ 25V
Max Gate Charge 3.1nC @ 10V
Gate-Source Threshold Voltage 1.8V @ 56μA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Continuous Drain Current at 25°C 110mA (Ta)
Drain-Source Breakdown Voltage 240V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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