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DMN3150LW-7

Part No :
DMN3150LW-7
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 28V 1.6A SC70-3
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
305+
$0.1660
$50.630
720+
$0.1390
$100.080
1,115+
$0.1350
$150.525
1,530+
$0.1310
$200.430
1,970+
$0.1270
$250.190
2,610+
$0.1150
$300.150
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 82,309 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Input Capacitance 305pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 88 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 014440-DMN3150LW-7
Family Name DMN3150LW
Introduction Date August 05, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
DMN3150LW; 

DMN3150LW-7, produced by Diodes Incorporated, is a N-Channel MOSFET transistor in SOT-323 SMD (SMT) package. The features include 28V drain-source breakdown voltage, 1.6A (Ta) continuous drain current at 25°C ,1.4V @ 250μA gate-source threshold voltage. DMN3150LW-7 is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 28V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Input Capacitance 305pF @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 88 mOhm @ 1.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-323
Dimension SC-70, SOT-323
Win Source Part Number 014440-DMN3150LW-7
Family Name DMN3150LW
Introduction Date August 05, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
DMN3150LW; 
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DMN3150LW-7 Transistors - FETs, MOSFETs - RF

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