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FDN335N

MOSFET N-CH 20V 1.7A SSOT3
Availability: 98441 in stock
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FDN335N, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in SuperSOT-3 SMD (SMT) package. The features include 20V drain-source breakdown voltage, 1.7A (Ta) continuous drain current at 25°C ,1.5V @ 250μA gate-source threshold voltage. FDN335N is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 310pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016102-FDN335N
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5nC @ 4.5V
Max Input Capacitance 310pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 70 mOhm @ 1.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SuperSOT-3
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016102-FDN335N
FDN335N Price

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FDN335N Transistors - FETs, MOSFETs - RF