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FDP038AN06A0

Part No :
FDP038AN06A0
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 60V 80A TO-220AB
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
30+
$1.9410
$58.230
60+
$1.6890
$101.340
95+
$1.6400
$155.800
130+
$1.5920
$206.960
165+
$1.5430
$254.595
215+
$1.3980
$300.570
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 12,552 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Limited
Quantity per package 800
Fake Threat In the Open Market 61 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 067009-FDP038AN06A0
Dimension TO-220-3
Case / Package TO-220-3
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Power Dissipation (Max) 310W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 6400pF @ 25V
Max Gate Charge 124nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Continuous Drain Current at 25°C 17A (Ta), 80A (Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
FDP038AN06A0, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220-3 Through Hole package. The features include 60V drain-source breakdown voltage, 17A (Ta), 80A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. FDP038AN06A0 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Limited
Quantity per package 800
Fake Threat In the Open Market 61 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 067009-FDP038AN06A0
Dimension TO-220-3
Case / Package TO-220-3
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 80A, 10V
Power Dissipation (Max) 310W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 6400pF @ 25V
Max Gate Charge 124nC @ 10V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Continuous Drain Current at 25°C 17A (Ta), 80A (Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
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