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FDP047N08

Part No :
FDP047N08
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
Trans MOSFET N-CH 75V 164A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 75V 164A TO-220
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
45+
$1.2060
$54.270
100+
$1.0490
$104.900
150+
$1.0190
$152.850
205+
$0.9890
$202.745
265+
$0.9590
$254.135
350+
$0.8680
$303.800
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 5,042 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Balance
Quantity per package 800
Family Name FDP047N08
Introduction Date September 14, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Alternative Parts
(Cross-Reference)
AOT400;  BUK655R0-75C; BUK754R3-75C;  BUK9506-75B;  
Fake Threat In the Open Market 61 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 204107-FDP047N08
Dimension TO-220-3
Case / Package TO-220-3
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Power Dissipation (Max) 268W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 9415pF @ 25V
Max Gate Charge 152nC @ 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 164A (Tc)
Drain-Source Breakdown Voltage 75V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
FDP047N08, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220-3 Through Hole package. The features include 75V drain-source breakdown voltage, 164A (Tc) continuous drain current at 25°C ,4.5V @ 250μA gate-source threshold voltage. FDP047N08 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Balance
Quantity per package 800
Family Name FDP047N08
Introduction Date September 14, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Alternative Parts
(Cross-Reference)
AOT400;  BUK655R0-75C; BUK754R3-75C;  BUK9506-75B;  
Fake Threat In the Open Market 61 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 204107-FDP047N08
Dimension TO-220-3
Case / Package TO-220-3
Mounting Through Hole
Temperature Range - Operating -55°C to 175°C (TJ)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 80A, 10V
Power Dissipation (Max) 268W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 9415pF @ 25V
Max Gate Charge 152nC @ 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 164A (Tc)
Drain-Source Breakdown Voltage 75V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
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FDP047N08 Transistors - FETs, MOSFETs - RF

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