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FDT457N

MOSFET N-CH 30V 5A SOT-223
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FDT457N, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in SOT-223-4 SMD (SMT) package. The features include 30V drain-source breakdown voltage, 5A (Ta) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. FDT457N is used in the -65°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.9nC @ 5V
Max Input Capacitance 235pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016216-FDT457N
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.9nC @ 5V
Max Input Capacitance 235pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 5A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016216-FDT457N
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FDT457N Transistors - FETs, MOSFETs - RF

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