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FDV302P

MOSFET P-CH 25V 120MA SOT-23
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Rated 5/5 based on 1 customer reviews

FDV302P, produced by Fairchild/ON Semiconductor, is a P-Channel MOSFET transistor in SOT-23 SMD (SMT) package. The features include 25V drain-source breakdown voltage, 120mA (Ta) continuous drain current at 25°C ,1.5V @ 250μA gate-source threshold voltage. FDV302P is used in the -55°C to 150°C (TJ) operating temperature range.

Quantity
Price
Ext. Price
185+
€0.234
€43.275
470+
€0.184
€86.499
1,555+
€0.166
€258.099
Availability: 556,983 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 185 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.31nC @ 4.5V
Max Input Capacitance 11pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016219-FDV302P
Family Name FDV302P
Introduction Date October 30, 1997
ECCN EAR99
Country of Origin Ireland, Israel, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
FDV302P_Q; FDV302P_D87Z;  FDV302P_NL; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.31nC @ 4.5V
Max Input Capacitance 11pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 016219-FDV302P
Family Name FDV302P
Introduction Date October 30, 1997
ECCN EAR99
Country of Origin Ireland, Israel, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 63 pct.
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
FDV302P_Q; FDV302P_D87Z;  FDV302P_NL; 
FDV302P Price

FDV302P Datasheet
FDV302P Application

FDV302P Replacement
FDV302P Pdf

FDV302P Pinout
FDV302P Image

FDV302P Picture
FDV302P In Stock

FDV302P Distributor
FDV302P Transistors - FETs, MOSFETs - RF

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