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HN4K03JUTE85LF

MOSFET N-CH 20V 0.1A USV
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Availability: 366,262 In Stock
HN4K03JUTE85LF, produced by Toshiba Semiconductor and Storage, is a N-Channel MOSFET transistor in USV SMD (SMT) package. The features include 20V drain-source breakdown voltage, 100mA (Ta) continuous drain current at 25°C , HN4K03JUTE85LF is used in the 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V
Max Input Capacitance 8.5pF @ 3V
Maximum Gate-Source Voltage 10V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Dimension 5-TSSOP, SC-70-5, SOT-353
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 096393-HN4K03JUTE85LF
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V
Max Input Capacitance 8.5pF @ 3V
Maximum Gate-Source Voltage 10V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Dimension 5-TSSOP, SC-70-5, SOT-353
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 096393-HN4K03JUTE85LF
HN4K03JUTE85LF Price

HN4K03JUTE85LF Datasheet
HN4K03JUTE85LF Application

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HN4K03JUTE85LF Transistors - FETs, MOSFETs - RF

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