HUF75344S3ST

MOSFET N-CH 55V 75A D2PAK

Manufacturer: Fairchild/ON Semiconductor

Availability: 1,060 In Stock

HUF75344S3ST, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in D2PAK (TO-263AB) SMD (SMT) package. The features include 55V drain-source breakdown voltage, 75A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUF75344S3ST is used in the -55°C to 175°C (TJ) operating temperature range.

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	210nC @ 20V
Max Input Capacitance	3200pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	285W (Tc)
Maximum Rds On at Id,Vgs	8 mOhm @ 75A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK (TO-263AB)
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition	Dry storage cabinet & Humidity protection package
Win Source Part Number	007527-HUF75344S3ST

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	210nC @ 20V
Max Input Capacitance	3200pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	285W (Tc)
Maximum Rds On at Id,Vgs	8 mOhm @ 75A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	D2PAK (TO-263AB)
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition	Dry storage cabinet & Humidity protection package
Win Source Part Number	007527-HUF75344S3ST