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HUF75631SK8T

MOSFET N-CH 100V 5.5A 8-SOP
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Availability: 9,972 In Stock
HUF75631SK8T, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in 8-SOP SMD (SMT) package. The features include 100V drain-source breakdown voltage, 5.5A (Ta) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUF75631SK8T is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Win Source Part Number 068298-HUF75631SK8T
Storage Condition Dry storage cabinet & Humidity protection package
Dimension 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SOP
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 39 mOhm @ 5.5A, 10V
Power Dissipation (Max) 2.5W (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 1225pF @ 25V
Max Gate Charge 79nC @ 20V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
Continuous Drain Current at 25°C 5.5A (Ta)
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Products specifications
Win Source Part Number 068298-HUF75631SK8T
Storage Condition Dry storage cabinet & Humidity protection package
Dimension 8-SOIC (0.154", 3.90mm Width)
Case / Package 8-SOP
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 39 mOhm @ 5.5A, 10V
Power Dissipation (Max) 2.5W (Ta)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 1225pF @ 25V
Max Gate Charge 79nC @ 20V
Gate-Source Threshold Voltage 4V @ 250μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain-Source Breakdown Voltage 100V
Technology MOSFET
Polarity N-Channel
Status Obsolete(EOL)
Packaging Reel - TR
Manufacturer Fairchild/ON Semiconductor
Categories Discrete Semiconductor Products
Continuous Drain Current at 25°C 5.5A (Ta)
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HUF75631SK8T Transistors - FETs, MOSFETs - RF

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