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HUF75639S3

MOSFET N-CH 100V 56A D2PAK
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Availability: 992 In Stock
HUF75639S3, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in D2PAK (TO-263AB) SMD (SMT) package. The features include 100V drain-source breakdown voltage, 56A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUF75639S3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 20V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068302-HUF75639S3
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 20V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 25 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068302-HUF75639S3
HUF75639S3 Price

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HUF75639S3 In Stock

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HUF75639S3 Transistors - FETs, MOSFETs - RF

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