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HUF76407DK8T

MOSFET 2N-CH 60V SOP-8
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Availability: 2,629 In Stock
HUF76407DK8T, produced by Fairchild/ON Semiconductor, is a transistor in 8-SO SMD (SMT) package. The features include 60V drain-source breakdown voltage, 3V @ 250μA gate-source threshold voltage. HUF76407DK8T is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Maximum Rds On at Id,Vgs 90 mOhm @ 3.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11.2nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068308-HUF76407DK8T
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Maximum Rds On at Id,Vgs 90 mOhm @ 3.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11.2nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068308-HUF76407DK8T
HUF76407DK8T Price

HUF76407DK8T Datasheet
HUF76407DK8T Application

HUF76407DK8T Replacement
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HUF76407DK8T Transistors - FETs, MOSFETs - RF

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