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HUF76419D3ST

MOSFET N-CH 60V 20A DPAK
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Availability: 133,266 In Stock
HUF76419D3ST, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-252AA SMD (SMT) package. The features include 60V drain-source breakdown voltage, 20A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. HUF76419D3ST is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27.5nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068309-HUF76419D3ST
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 27.5nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 37 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068309-HUF76419D3ST
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HUF76419D3ST Transistors - FETs, MOSFETs - RF