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HUF76629D3ST

MOSFET N-CH 100V 20A DPAK
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Availability: 771 In Stock
HUF76629D3ST, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-252AA SMD (SMT) package. The features include 100V drain-source breakdown voltage, 20A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. HUF76629D3ST is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1285pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068312-HUF76629D3ST
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1285pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 52 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068312-HUF76629D3ST
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HUF76629D3ST In Stock

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HUF76629D3ST Transistors - FETs, MOSFETs - RF

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