HUFA75309P3

MOSFET N-CH 55V 19A TO-220AB

Manufacturer: Fairchild/ON Semiconductor

Availability: 10,500 In Stock

HUFA75309P3, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 55V drain-source breakdown voltage, 19A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUFA75309P3 is used in the -55°C to 175°C (TJ) operating temperature range.

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	24nC @ 20V
Max Input Capacitance	350pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	55W (Tc)
Maximum Rds On at Id,Vgs	70 mOhm @ 19A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Storage Condition	Dry storage cabinet & Humidity protection package
Win Source Part Number	068315-HUFA75309P3

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Products specifications

Categories	Discrete Semiconductor Products
Manufacturer	Fairchild/ON Semiconductor
Packaging	Tube/Rail
Status	Obsolete(EOL)
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	55V
Continuous Drain Current at 25°C	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	24nC @ 20V
Max Input Capacitance	350pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	55W (Tc)
Maximum Rds On at Id,Vgs	70 mOhm @ 19A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Storage Condition	Dry storage cabinet & Humidity protection package
Win Source Part Number	068315-HUFA75309P3