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HUFA75545P3

MOSFET N-CH 80V 75A TO-220AB
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Availability: 2,334 In Stock
HUFA75545P3, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 80V drain-source breakdown voltage, 75A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. HUFA75545P3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 235nC @ 20V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 204927-HUFA75545P3
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 235nC @ 20V
Max Input Capacitance 3750pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 204927-HUFA75545P3
HUFA75545P3 Price

HUFA75545P3 Datasheet
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