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HUFA76619D3

MOSFET N-CH 100V 18A IPAK
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Availability: 2,384 In Stock
HUFA76619D3, produced by Fairchild/ON Semiconductor, is a N-Channel MOSFET transistor in TO-251AA Through Hole package. The features include 100V drain-source breakdown voltage, 18A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. HUFA76619D3 is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 767pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 123024-HUFA76619D3
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 767pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 123024-HUFA76619D3
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HUFA76619D3 Transistors - FETs, MOSFETs - RF