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IPA65R110CFD

Part No :
IPA65R110CFD
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 650V 31.2A TO220
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
9+
$5.5940
$50.346
22+
$4.6570
$102.454
34+
$4.5230
$153.782
46+
$4.3900
$201.940
59+
$4.2560
$251.104
78+
$3.8540
$300.612
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 12,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.3mA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 3240pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34.7W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 12.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205215-IPA65R110CFD
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 69 pct.
Supply and Demand Status Limited
IPA65R110CFD, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO220 Full Pack Through Hole package. The features include 650V drain-source breakdown voltage, 31.2A (Tc) continuous drain current at 25°C ,4.5V @ 1.3mA gate-source threshold voltage. IPA65R110CFD is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1.3mA
Max Gate Charge 118nC @ 10V
Max Input Capacitance 3240pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34.7W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 12.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 205215-IPA65R110CFD
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 69 pct.
Supply and Demand Status Limited
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IPA65R110CFD Price

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IPA65R110CFD Distributor
IPA65R110CFD Transistors - FETs, MOSFETs - RF

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