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IPB60R099CP

MOSFET N-CH 600V 31A D2PAK
Manufacturer: Infineon Technologies
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Availability: 1 In Stock
IPB60R099CP, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO263-3-2 SMD (SMT) package. The features include 600V drain-source breakdown voltage, 31A (Tc) continuous drain current at 25°C ,3.5V @ 1.2mA gate-source threshold voltage. IPB60R099CP is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068976-IPB60R099CP
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.2mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 068976-IPB60R099CP
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IPB60R099CP Transistors - FETs, MOSFETs - RF

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