Search
Filters

IPB60R190C6

MOSFET N-CH 600V 20.2A TO263
Manufacturer: Infineon Technologies
rohs
Quantity
Price
Ext. Price
20+
€2.552
€51.048
50+
€1.914
€95.715
160+
€1.724
€275.760
Availability: 1 In Stock
This product has a minimum quantity of 20
IPB60R190C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO263-2 SMD (SMT) package. The features include 600V drain-source breakdown voltage, 20.2A (Tc) continuous drain current at 25°C ,3.5V @ 630μA gate-source threshold voltage. IPB60R190C6 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 139501-IPB60R190C6
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 139501-IPB60R190C6
IPB60R190C6 Price

IPB60R190C6 Datasheet
IPB60R190C6 Application

IPB60R190C6 Replacement
IPB60R190C6 Pdf

IPB60R190C6 Pinout
IPB60R190C6 Image

IPB60R190C6 Picture
IPB60R190C6 In Stock

IPB60R190C6 Distributor
IPB60R190C6 Transistors - FETs, MOSFETs - RF

Image
Mfr.Part No
Description
Stock
N-Channel Enhancement Mode Field Effect Transistor
25415
IC AMP VERY LO NOISE 5X6MM 22LD
470
IC LATCH OCT TRANSP D 3ST 20SOIC
1892