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IPD60R380C6

Part No :
IPD60R380C6
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 600V 10.6A TO252
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
35+
$1.6120
$56.420
75+
$1.4030
$105.225
115+
$1.3620
$156.630
155+
$1.3220
$204.910
200+
$1.2820
$256.400
260+
$1.1610
$301.860
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 11,788 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Limited
Fake Threat In the Open Market 72 pct.
Popularity Medium
Win Source Part Number 017325-IPD60R380C6
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package PG-TO252-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Power Dissipation (Max) 83W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 700pF @ 100V
Max Gate Charge 32nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 10.6A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
IPD60R380C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO252-3 SMD (SMT) package. The features include 600V drain-source breakdown voltage, 10.6A (Tc) continuous drain current at 25°C ,3.5V @ 320μA gate-source threshold voltage. IPD60R380C6 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Limited
Fake Threat In the Open Market 72 pct.
Popularity Medium
Win Source Part Number 017325-IPD60R380C6
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Case / Package PG-TO252-3
Mounting SMD (SMT)
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 380 mOhm @ 3.8A, 10V
Power Dissipation (Max) 83W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 700pF @ 100V
Max Gate Charge 32nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 320μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 10.6A (Tc)
Drain-Source Breakdown Voltage 600V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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IPD60R380C6 Price

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IPD60R380C6 In Stock

IPD60R380C6 Distributor
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