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IPP50R299CPXKSA1

Part No :
IPP50R299CPXKSA1
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 550V 12A TO220-3
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1,636 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1190pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 126175-IPP50R299CPXKSA1
Popularity Medium
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Balance
IPP50R299CPXKSA1, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO220-3-1 Through Hole package. The features include 550V drain-source breakdown voltage, 12A (Tc) continuous drain current at 25°C ,3.5V @ 440μA gate-source threshold voltage. IPP50R299CPXKSA1 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1190pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 104W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 126175-IPP50R299CPXKSA1
Popularity Medium
Fake Threat In the Open Market 67 pct.
Supply and Demand Status Balance
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IPP50R299CPXKSA1 Transistors - FETs, MOSFETs - RF

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