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IPP60R165CP

MOSFET N-CH 600V 21A TO-220
Manufacturer: Infineon Technologies
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Rated 5/5 based on 1 customer reviews

IPP60R165CP, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO-220-3 Through Hole package. The features include 600V drain-source breakdown voltage, 21A (Tc) continuous drain current at 25°C ,3.5V @ 790μA gate-source threshold voltage. IPP60R165CP is used in the -55°C to 150°C (TJ) operating temperature range.

Quantity
Price
Ext. Price
10+
€5.398
€53.982
25+
€4.261
€106.533
70+
€3.836
€268.492
Availability: 900 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 10 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 790μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2000pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 069071-IPP60R165CP
Family Name IPP60R165CP
Introduction Date September 01, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 67 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
STP28NM60ND;  STP34NM60ND;  STP20NM60FD;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 790μA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2000pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 069071-IPP60R165CP
Family Name IPP60R165CP
Introduction Date September 01, 2005
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2019
Raw Materials Based on silicon element (Si) ; Blue-grey metallic luster
Is this a common-used part? Yes
Popularity High
Fake Threat 67 pct.
Supply and Demand Status Limited
ECAD Models Contact us to download
Material Safety Data Sheet(MSDS) Get Access
Alternative Parts
(Cross-Reference)
STP28NM60ND;  STP34NM60ND;  STP20NM60FD;  
IPP60R165CP Price

IPP60R165CP Datasheet
IPP60R165CP Application

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IPP60R165CP In Stock

IPP60R165CP Distributor
IPP60R165CP Transistors - FETs, MOSFETs - RF

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