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IPW60R041C6

Part No : IPW60R041C6
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 600V 77.5A TO 247-3
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
5+
$11.506
$57.530
15+
$9.736
$146.040
20+
$9.441
$188.820
25+
$9.146
$228.650
30+
$8.851
$265.530
40+
$7.966
$318.640
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 150 pieces can ship immediately
MOQ: 5 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 2.96mA
Max Gate Charge 290nC @ 10V
Max Input Capacitance 6530pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 481W (Tc)
Maximum Rds On at Id,Vgs 41 mOhm @ 44.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086340-IPW60R041C6
Family Name IPW60R041C6
Introduction Date September 27, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
TSM60NB041PW C1G; SiHG73N60E-GE3;   SiHG73N60E-E3; 
IPW60R041C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 77.5A (Tc) continuous drain current at 25°C ,3.5V @ 2.96mA gate-source threshold voltage. IPW60R041C6 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 77.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 2.96mA
Max Gate Charge 290nC @ 10V
Max Input Capacitance 6530pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 481W (Tc)
Maximum Rds On at Id,Vgs 41 mOhm @ 44.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 086340-IPW60R041C6
Family Name IPW60R041C6
Introduction Date September 27, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
TSM60NB041PW C1G; SiHG73N60E-GE3;   SiHG73N60E-E3; 
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IPW60R041C6 Transistors - FETs, MOSFETs - RF

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