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IPW60R099C6

MOSFET N-CH 600V 37.9A TO247
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
15+
$3.852
$57.780
35+
$3.041
$106.435
110+
$2.737
$301.070
Availability: 2,400 In Stock
This product has a minimum quantity of 15
IPW60R099C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 37.9A (Tc) continuous drain current at 25°C ,3.5V @ 1.21mA gate-source threshold voltage. IPW60R099C6 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.21mA
Max Gate Charge 119nC @ 10V
Max Input Capacitance 2660pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 087413-IPW60R099C6
Family Name IPW60R099C6
Introduction Date February 09, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
TSM60NB099PW C1G; R6535ENZVC8;  R6530ENZ1C9; 
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
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  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.21mA
Max Gate Charge 119nC @ 10V
Max Input Capacitance 2660pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 087413-IPW60R099C6
Family Name IPW60R099C6
Introduction Date February 09, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
TSM60NB099PW C1G; R6535ENZVC8;  R6530ENZ1C9; 
IPW60R099C6 Price

IPW60R099C6 Datasheet
IPW60R099C6 Application

IPW60R099C6 Replacement
IPW60R099C6 Pdf

IPW60R099C6 Pinout
IPW60R099C6 Image

IPW60R099C6 Picture
IPW60R099C6 In Stock

IPW60R099C6 Distributor
IPW60R099C6 Transistors - FETs, MOSFETs - RF

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