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IPW60R190C6

Part No : IPW60R190C6
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 600V 20.2A TO247
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Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
20+
€2.380
€47.592
45+
€2.014
€90.639
70+
€1.953
€136.710
100+
€1.892
€189.180
125+
€1.831
€228.825
165+
€1.648
€271.904
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 6,631 pieces can ship immediately
MOQ: 20 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 089861-IPW60R190C6
Family Name IPW60R190C6
Introduction Date August 27, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 35 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
STW20NM65N; SiHG21N65EF-GE3; STW25NM60ND;  

IPW60R190C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 20.2A (Tc) continuous drain current at 25°C ,3.5V @ 630μA gate-source threshold voltage. IPW60R190C6 is used in the -55°C to 150°C (TJ) operating temperature range.

Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 089861-IPW60R190C6
Family Name IPW60R190C6
Introduction Date August 27, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 35 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
STW20NM65N; SiHG21N65EF-GE3; STW25NM60ND;  
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IPW60R190C6 Transistors - FETs, MOSFETs - RF

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