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IPW60R190C6

MOSFET N-CH 600V 20.2A TO247
Manufacturer: Infineon Technologies
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IPW60R190C6, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 600V drain-source breakdown voltage, 20.2A (Tc) continuous drain current at 25°C ,3.5V @ 630μA gate-source threshold voltage. IPW60R190C6 is used in the -55°C to 150°C (TJ) operating temperature range.

Quantity
Price
Ext. Price
20+
€2.209
€44.170
50+
€1.744
€87.204
165+
€1.570
€258.968
Availability: 2,400 In Stock
Not enough quantity? Need immediate assistance?
MOQ: 20 pcs
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 089861-IPW60R190C6
Family Name IPW60R190C6
Introduction Date August 27, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
STW20NM65N; SiHG21N65EF-GE3; STW25NM60ND;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 630μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 151W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 9.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 089861-IPW60R190C6
Family Name IPW60R190C6
Introduction Date August 27, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Alternative Parts
(Cross-Reference)
STW20NM65N; SiHG21N65EF-GE3; STW25NM60ND;  
IPW60R190C6 Price

IPW60R190C6 Datasheet
IPW60R190C6 Application

IPW60R190C6 Replacement
IPW60R190C6 Pdf

IPW60R190C6 Pinout
IPW60R190C6 Image

IPW60R190C6 Picture
IPW60R190C6 In Stock

IPW60R190C6 Distributor
IPW60R190C6 Transistors - FETs, MOSFETs - RF

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