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IPW90R1K2C3

Part No :
IPW90R1K2C3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET N-CH 900V 5.1A TO-247
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
18+
$2.7890
$50.202
44+
$2.3220
$102.168
67+
$2.2550
$151.085
92+
$2.1890
$201.388
118+
$2.1220
$250.396
157+
$1.9220
$301.754
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 10,760 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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Products specifications
Supply and Demand Status Balance
Fake Threat In the Open Market 68 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 069128-IPW90R1K2C3
Dimension TO-247-3
Case / Package PG-TO247-3
Mounting Through Hole
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.8A, 10V
Power Dissipation (Max) 83W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 710pF @ 100V
Max Gate Charge 28nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 310μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 5.1A (Tc)
Drain-Source Breakdown Voltage 900V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
IPW90R1K2C3, produced by Infineon Technologies, is a N-Channel MOSFET transistor in PG-TO247-3 Through Hole package. The features include 900V drain-source breakdown voltage, 5.1A (Tc) continuous drain current at 25°C ,3.5V @ 310μA gate-source threshold voltage. IPW90R1K2C3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Supply and Demand Status Balance
Fake Threat In the Open Market 68 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 069128-IPW90R1K2C3
Dimension TO-247-3
Case / Package PG-TO247-3
Mounting Through Hole
Temperature Range - Operating -55°C to 150°C (TJ)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.8A, 10V
Power Dissipation (Max) 83W (Tc)
Maximum Gate-Source Voltage ±20V
Max Input Capacitance 710pF @ 100V
Max Gate Charge 28nC @ 10V
Gate-Source Threshold Voltage 3.5V @ 310μA
Drive Voltage (Max Rds On, Min Rds On) 10V
Continuous Drain Current at 25°C 5.1A (Tc)
Drain-Source Breakdown Voltage 900V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Tube/Rail
Manufacturer Infineon Technologies
Categories Discrete Semiconductor Products
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