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IRF1010ZPBF

Part No : IRF1010ZPBF
Manufacturer : Infineon Technologies
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 55V 75A TO-220AB
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
90+
€0.545
€49.055
210+
€0.461
€96.868
325+
€0.447
€145.220
445+
€0.433
€192.841
575+
€0.419
€240.870
770+
€0.378
€290.672
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 3,000 pieces can ship immediately
MOQ: 90 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069237-IRF1010ZPBF
Popularity Medium
Fake Threat In the Open Market 29 pct.
Supply and Demand Status Limited
IRF1010ZPBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 55V drain-source breakdown voltage, 75A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRF1010ZPBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069237-IRF1010ZPBF
Popularity Medium
Fake Threat In the Open Market 29 pct.
Supply and Demand Status Limited
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IRF1010ZPBF Transistors - FETs, MOSFETs - RF

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