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IRF1404PBF

MOSFET N-CH 40V 202A TO-220AB
Manufacturer: Infineon Technologies
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Quantity
Price
Ext. Price
65+
€0.694
€45.104
165+
€0.548
€90.437
550+
€0.493
€271.260
Availability: 3,000 In Stock
This product has a minimum quantity of 65
IRF1404PBF, produced by Infineon Technologies, is a N-Channel MOSFET transistor in TO-220AB Through Hole package. The features include 40V drain-source breakdown voltage, 202A (Tc) continuous drain current at 25°C ,4V @ 250μA gate-source threshold voltage. IRF1404PBF is used in the -55°C to 175°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 196nC @ 10V
Max Input Capacitance 5669pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 333W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 121A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091585-IRF1404PBF
Family Name IRF1404
Introduction Date February 02, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
BUK9509-40B,127;  BUK958R5-40E,127; BUK755R2-40B;  
  • The Cut-Off time of Same Day Shipment is 5PM (GMT+8), Monday to Friday;
  • The Pre-Shipment Inspection (PSI) will be applied;
  • Taxes & VAT will not be included;
  • For more details, please kindly review our FAQ page.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 202A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 196nC @ 10V
Max Input Capacitance 5669pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 333W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 121A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 091585-IRF1404PBF
Family Name IRF1404
Introduction Date February 02, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Alternative Parts
(Cross-Reference)
BUK9509-40B,127;  BUK958R5-40E,127; BUK755R2-40B;  
IRF1404PBF Price

IRF1404PBF Datasheet
IRF1404PBF Application

IRF1404PBF Replacement
IRF1404PBF Pdf

IRF1404PBF Pinout
IRF1404PBF Image

IRF1404PBF Picture
IRF1404PBF In Stock

IRF1404PBF Distributor
IRF1404PBF Transistors - FETs, MOSFETs - RF

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